Following SK Hynix, Samsung Electronics will launch 236 layers of NAND flash memory this year.

According to BusinessKorea, Samsung Electronics will release 236-layer NAND flash memory products within this year. It also plans to open a new research and development center this month to develop more advanced NAND flash memory products.

Currently, memory chip manufacturers are racing to increase the number of layers in their products. SK Hynix recently completed the development of a 238-layer product, and Micron Technology announced the development of the world's first 232-layer NAND flash memory product.

In NAND flash memory market, Samsung Electronics market share accounted for 35%, the highest in the world. However, Samsung Electronics 'current number of layers is only 176. Samsung is preparing to add 60 layers to its production technology and competitiveness in price and performance.

Foreign media revealed that SK Hynix is developing UFS 4.0 flash memory data processing speed: continuous read 4000 MB/s, continuous write 2800 MB/s. The overall size is 11×13×0.8mm. In terms of speed alone, the speed of exposure now may only be equipped with V7 NAND.

In contrast, Samsung's UFS 4.0 flash memory, which was launched on May 4, uses 176 layers of NAND (V7), continuously reads 4200 MB/s, continuously writes 2800 MB/s, and has a form factor of 11×13×1 mm.

"SK Hynix is developing UFS 4.0 flash memory based on 238 layers of NAND, which is expected to be mass produced in the first half of next year,"