The project of Zhejiang Tsinghua Yangtze River Delta Semiconductor Industry Technology Innovation Center is located in Huzhou, focusing on breaking through the cutting-edge technology of the third generation semiconductor materials.
Recently, Zhejiang Tsinghua Yangtze River Delta Research Institute and Zhejiang Huzhou City government signed a contract, both sides will jointly build semiconductor industry technology innovation center project, the project signed to settle in Huzhou Xisai Science Valley.
Tsinghua Yangtze River Delta news shows that the project relies on the advantages of science and technology and talents of the research institute, takes major industrialization projects as the carrier, pays close attention to Huzhou's strategic needs to build an independent innovation highland for semiconductor equipment and the innovation needs of semiconductor device industry, makes every effort to attack the core technologies of MEMS RF chips, memory chips, analog chips, power chips and other chips, and focuses on breaking through the cutting-edge technologies of the third generation semiconductor materials represented by gallium nitride and intelligent precision control. Key common technologies in the industry.
It is reported that Zhejiang Tsinghua Yangtze River Delta Research Institute is jointly established by Zhejiang Province and Tsinghua University. It is committed to building a cooperation bridge between Tsinghua University and Yangtze River Delta region, opening up the transformation channel from scientific and technological achievements to industrial application, building four platforms of scientific and technological research and development, industrial development, science and technology finance and talent support around regional development strategy and high-tech industry demand, and building a new innovation carrier with advanced level.
