Tianke Heda has released a new product of 8-inch silicon carbide substrate, and the conductive type will be mass produced on a small scale next year.

Thank you, Mr. Air, a netizen of CTOnews.com, for your clue delivery! CTOnews.com December 2 news, Beijing Tiankeheda Semiconductor recently released the "8-inch conductive silicon carbide substrate" new product. The company introduces the key technical parameters of the new product "8-inch conductive silicon carbide substrate" and announces that it will achieve small-scale mass production of 8-inch conductive silicon carbide substrate in 2023.

CTOnews.com learned that the production capacity of 6-inch series products of Xuzhou Tianke Heda production base reached the first in the country in 2021, and the current 6-inch production capacity of Beijing Daxing headquarters base continues to break through.

Tianke Heda is a leading enterprise in the field of silicon carbide substrate in China, which has continuously broken through the key core technology for the preparation of larger size and higher quality silicon carbide substrate.

The indicators are as follows:

(1) 8-inch silicon carbide crystal (diameter up to 209mm) and wafer appearance

(2) Raman spectrum test data show that 100% area of 8 inch silicon carbide substrate is 4H crystal.

(3) the data of XRD three-point rocking curve show that the FWHM is less than 20 arcsec.

(4) the test results of dislocation defect density show that EPD < 4000 per square centimeter, TSD < 4000 per square centimeter, BPD < 200per square centimeter, the overall dislocation density is in the international leading level.