Zhixun Innovation announced the successful development of China's first fully self-developed small and medium capacity 19nm 2D NAND flash memory chip.

Thanks to CTOnews.com netizen kinja for the clue delivery! CTOnews.com December 13 news, Zhixun Innovation announced today that its first domestic small and medium capacity 19nm 2D NAND flash memory chip has been successfully developed and is expected to be put on the market early next year.

Zhi Xun Innovation said that this is the first fully self-developed, the use of advanced technology of small and medium capacity 19nm 2D NAND flash memory chip. The product will cover 512Mb, 1Gb and 2Gb capacity, provide 1.8V and 3.3V voltages, and will be packaged with serial interfaces SPI and WSON.

According to reports, it can not only meet the reliability requirements of consumer products, but also meet the requirements of erasure times and data retention in high reliability application scenarios such as industrial and vehicle specifications. Zhi Xun Innovation data show that the product has achieved a 40% reduction in chip area, a 25% increase in I / O speed, and a 70% increase in erase and write cycles.

CTOnews.com learned that official information shows that Zhixun Innovation was founded in October 2021, headquartered in Wuxi, Jiangsu Province, and has set up branches in Shanghai, Shenzhen, Hong Kong and other places. At present, Zhi Xun Innovation is conducting round A financing.