Samsung announces successful development of its first 12nm DDR5 DRAM with a speed of up to 7.2Gbps

CTOnews.com, December 21 (Xinhua)-- Samsung Electronics announced today that it has successfully developed its first 16Gb DDR5 DRAM built with 12-nanometer (nm) process technology and completed a product compatibility evaluation together with AMD.

▲, from Samsung Electronics, said the breakthrough was achieved through the use of a new high dielectric (high-k) material to increase battery capacitance and patented design technology to improve key circuit features.

Samsung data show that combined with advanced multilayer extreme ultraviolet (EUV) lithography technology, the new DRAM has Samsung's highest Die density (Die density) and can increase wafer productivity by 20 per cent. Based on the latest DDR5 standard, Samsung 12nm-class DRAM will unlock at speeds of up to 7.2Gbps (Gbps).

In terms of energy efficiency, compared with the previous generation of Samsung DRAM products, the power consumption of the 12nm DRAM is reduced by about 23%.

CTOnews.com learned that with the mass production of the new DRAM in 2023, Samsung plans to expand the DRAM product based on advanced 12nm-level process technology to a wider market.