Shulou(Shulou.com)11/24 Report--

CTOnews.com, January 24 (Xinhua)-- recently, progress has been made in the development of semiconductors for power control using diamond, known as "ultimate power semiconductors", according to the Financial Associated Press. Professor Kaisu, a professor at Saga University in Japan, worked with precision parts manufacturer Orbray of Japan to develop power semiconductors made of diamond and operate at 875MW of electricity per square centimeter.

Among the existing diamond semiconductors, the output power value of this power semiconductor is the highest in the world and is second only to about 2090 megawatts of gallium nitride products. Compared with silicon carbide (SiC) products and gallium nitride (GaN) products as a new generation of power semiconductors, diamond semiconductors have excellent resistance to high voltage, and power loss is considered to be reduced to 1/50000 of silicon products.

Diamond power semiconductors also have strong heat resistance and radiation resistance, and are expected to become necessary components such as artificial satellites before 2050.

Diamond material has the characteristics of high carrier mobility, large carrier saturation drift rate and strong breakdown field, so it is an ideal material for manufacturing high power, high temperature and high frequency devices. Because of its wide band gap, high thermal conductivity, strong breakdown electric field and very high charge mobility (CVD diamond electron mobility > 75000px2/V.s) Diamond semiconductor devices can operate in very harsh environments such as high frequency, high power, high voltage and strong radiation, which is called "ultimate semiconductor material".

CTOnews.com has learned that the global annual production of natural diamonds is about 150m carats, while that of synthetic diamonds is more than 20bn carats, 95 per cent of which comes from Chinese mainland.

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