Shulou(Shulou.com)11/24 Report--

Thank you, Mr. Air, a netizen of CTOnews.com, for your clue delivery! CTOnews.com March 14, CTOnews.com learned from the official website of Xi'an University of posts and Telecommunications that a few days ago, Professor Chen Haifeng from the New key Laboratory of Semiconductor Devices and Materials of Xi'an University of posts and Telecommunications successfully fabricated high-quality gallium oxide epitaxial wafers on 8-inch silicon wafers, which marked the university's important progress in ultra-wide band gap semiconductor research.

Professor Chen Haifeng, head of the team, said that gallium oxide is an ultra-wide band gap semiconductor material with excellent resistance to high voltage and sun-blind ultraviolet response, and has great potential for application in the field of power devices and optoelectronics. Gallium oxide heteroepitaxy on silicon is beneficial to the direct integration of silicon circuit and gallium oxide circuit, and has the advantages of low cost and good heat dissipation.

Gallium oxide is a new type of ultra-wide band gap semiconductor material, which is the fourth generation semiconductor material which has been widely concerned and recognized by the world. Compared with the previous semiconductor materials, gallium oxide materials have higher breakdown electric field strength and lower on-resistance, resulting in lower energy loss and higher power conversion efficiency. In addition, gallium oxide has good chemical and thermal stability, low cost, simple preparation method, convenient batch production, and obvious advantages in industrialization.

In recent years, China has continuously made a breakthrough in the preparation of gallium oxide, from 2 inches to 6 inches last year, and then to the latest 8 inches, the preparation technology of gallium oxide is becoming more and more mature.

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