Armor demonstrates the new concept of flash memory: implementing 7 bits / cell

CTOnews.com, April 4 (Xinhua)-- Kioxia's NAND researchers last year demonstrated a Hepta-level NAND flash concept that can hold up to 7 bits per Cell, doubling QLC NAND storage capacity.

If the armor can stabilize this storage architecture at room temperature, it may become the ultimate replacement for mechanical hard drives in consumer and enterprise application scenarios.

CTOnews.com learned from the report that in order to create a 7 bits / cell NAND, the armor combines a new silicon treatment process and heat dissipation technology to increase the density of the cell. The new silicon technology replaces the current polysilicon material with monocrystalline silicon, which can reduce NAND flash read noise (read noise) by up to 2/3, resulting in a clearer read signal.

Kioxia said that the production cost of this new storage architecture will also be greatly reduced, and even proposed a solution that combines Hepta-level flash memory with cryogenic cooling. This will be cheaper than the (air-cooled or passively cooled) SSD available on the market today.