Power consumption reduced by 23%, mass yield increased by 20%, Samsung began mass production of 12 nm DDR5 DRAM

Thanks to CTOnews.com netizen OC_Formula for the clue delivery! CTOnews.com May 18, Samsung announced today that it has mass-produced 12nm DDR5 DRAM after announcing the development of 16Gb's DDR5 DRAM in December last year.

The memory chip industry is currently at a low ebb, and Samsung hopes to further consolidate its leading position in this field by mass-producing 12nm's DRAM.

CTOnews.com learned from Samsung's press release that the new chip consumes 23% less power than the previous generation, while wafer productivity increases by 20%, which means the chip size is smaller than the previous generation, and a single wafer can produce 20% more chips.

Samsung says the reduced power consumption of 16Gb DDR5 DRAM will enable server and data center operators to reduce energy consumption and carbon footprint.

The chip also has the maximum speed of 7.2Gbps, which means it can process 60GB in about a second, meeting the needs of data centers, AI and new computing applications.

The implementation of the 12nm node is due to Samsung's use of a new high-k material that allows the chip to accurately distinguish the difference between data signals.