Guangwei Shenze DDR5 8000 memory will be released soon: featured Hynix A-Die, 10-layer PCB

CTOnews.com July 21 news, Guangwei announced today that the new magic strategy series DDR5 8000MHz (16GB*2) 32GB Fast memory will be launched soon.

The memory of CTOnews.com with Shenze series is introduced as follows:

The GLOWAY DDR5 8000MHz memory kit is made of Hynix A-Die particles and runs as low as CL38 at a frequency as high as 8000MHz.

The Shenze series uses a thickened 10 μ m gold finger to extend the service life of the memory. Through advanced materials and design, the durability of the gold finger is greatly enhanced without having to worry about the oxidation and rubbing of the gold finger.

This release of the Shenze DDR5 memory selection of specially selected Hynix A-Die overclocking particles on the basis of the use of stronger electrical performance of 10-layer PCB board, with a very strong overclocking playability. The ten-layer PCB board is a mature overclocking basic configuration, which uses an advanced cascading design to stack the circuit wiring layer by layer, providing players with unprecedented performance improvement.

In addition, this series of memory adopts a new heat dissipation design, and a copper homogenizing plate is added to the inside of the 2.0mm thick heat sink. The copper sheet is close to the thermal conductive silicone grease and has a strong thermal conductivity, which can provide stronger heat dissipation support when the memory is running at high frequency and manual overclocking. At the same time, both sides of the product use graphics card-grade high-performance silicone heat dissipation pad, close to the heat sink, PCB and particles can effectively conduct heat even if they are trapped in the heat battlefield.

In addition to the highest 8000MHz 16GB × 2 set, Guangwei Shenze DDR5 memory also provides 6400MHz, 6800MHz, 7200MHz, 7600MHz, 8000MHz and other specifications for players to choose from, and will be launched in the near future.