The team of China University of Science and Technology sets a new world record for the steady-state efficiency of perovskite batteries.

Thanks to CTOnews.com netizen LexPan for the clue delivery! CTOnews.com, July 22 (Xinhua) Professor Xu Jixian of the University of Science and Technology of China has made important progress in perovskite solar cells, creating a world record of 26.1% for the steady-state efficiency of perovskite cells, which is included in the "Best Research-Cell Efficiency Chart" of the National Laboratory of Renewable Energy in the United States.

▲ official website of China University of Science and Technology according to the official website of China University of Science and Technology, NREL Chart has a history of nearly 50 years and is the oldest photovoltaic world record list. Its authority and honor are recognized by the international photovoltaic academic and industrial fields and represent the most cutting-edge technological trends in the photovoltaic field. This collection represents a new breakthrough in the research and development of photovoltaic technology by the University of Science and Technology of China.

The study is the latest achievement of Professor Xu Jixian's continuous exploration of new perovskite single junctions and the next generation of crystalline silicon-perovskite laminated batteries, according to the Chinese University of Science and Technology. This work is supported by the National Natural Science Foundation of China, the Ministry of Science and Technology of China and the carbon neutralization Research Institute of University of Science and Technology of China.

CTOnews.com previously reported that in February this year, the team of China University of Science and Technology and its partners proposed a new structure and breakthrough scheme named PIC (porous Insulation contact) to solve the long-standing contradiction of "passivation-transmission" in perovskite solar cells, which achieved the world record for steady-state certification efficiency of p-i-n trans-structure devices. It shows universal applicability in a variety of substrates and perovskite components.

The team verified the PIC scheme in the p-i-n trans structure, which is widely used in laminated devices, and realized the decrease of hole interface recombination speed from ~ 60cm / s to 10cm / s for the first time, and the highest efficiency of 25.5% single junction (the steady-state authentication efficiency record of p-i-n structure is 24.7%).