SK Hynix shows the world's highest layer 321 layer NAND flash memory samples, improving efficiency by 59%

Thanks to CTOnews.com netizens OC_Formula, rain and snow on the way, South China Daniel Wu's clue delivery! CTOnews.com August 9 news, SK Hynix announced today that through the release of 321 layer 4D NAND samples, it has officially become the first company in the industry to develop more than 300 layers of NAND flash memory.

SK Hynix announced that it will further improve 321 layers of NAND flash memory and plans to start mass production in the first half of 2025.

CTOnews.com attached SK Hynix 321th floor 1Tb TLC NAND introduction is as follows:

The efficiency of 321 layer 1Tb TLC NAND is 59% higher than that of the previous generation 238 layer 512Gb. This is because the data storage unit can stack to a higher number of single chips to achieve larger storage capacity on the same chip, thus increasing the number of chips on the unit wafer.

In addition, SK Hynix has launched next-generation NAND solutions optimized for these needs: enterprise-class solid state drives (Enterprise SSD, eSSD) with PCIe 5 (Gen5) interface and UFS 4.0.

SK Hynix also said that based on the accumulated product technology and continuous optimization of internal solutions, the company is actively developing the next generation of PCI 6.0and UFS 5.0products in order to continue to lead the market in the future.