Shulou(Shulou.com)11/24 Report--

Thanks to CTOnews.com netizen OC_Formula for the clue delivery! CTOnews.com October 8 news, according to German media computerbase news, Samsung introduced its memory roadmap at the Samsung Foundry Forum 2022 event.

As shown above, in the coming 2023, Samsung will enter the 1bnm process stage, memory chip capacity will reach 24Gb (3GB)-32Gb (4GB), native speed will be 6.4-7.2Gbps. In terms of video memory, a new generation of GDDR7 graphics memory will be available next year, so the medium-term changes of the new generation of AMD and Nvidia graphics cards are likely to use GDDR7 video memory.

In addition, Samsung has some long-term ideas, such as the introduction of DDR6 memory in 2026 and the speed of native 10Gbps in 2027.

Samsung also unveiled a roadmap for its flash memory, which is expected to launch a V9 NAND chip in 2024.

CTOnews.com has reported that Samsung pointed out at its previous Tech Day 2022 event that its ninth generation V-NAND is under development and plans for mass production in 2024. By 2030, Samsung envisions more than 1000 layers of NAND stacked to better support future data-intensive technologies. Samsung also announced that the world's highest capacity 1Tb TLC V-NAND will be available to customers by the end of this year.

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