Armor and Western Digital announce 218 layers of 3D NAND flash memory

Thanks to CTOnews.com netizens Wu Yanzu in South China for the delivery of clues! CTOnews.com, March 31 (Xinhua)-- Armor and Western Digital have announced their latest 3D flash memory technology, which has ultra-high capacity, performance, reliability and reasonable price. This technology uses the results of advanced scaling and wafer bonding technology to meet the needs of the fast-growing data market in a variety of industries.

According to Alper Ilkbahar, Senior Vice President of Technology and Strategy of Western Digital, the cooperation and R & D investment of the two companies enable them to complete the transition of this basic technology ahead of schedule and provide high-performance and capital-efficient solutions. By introducing a number of unique processes and architectures, Shearer and Western Digital reduce costs, achieve continuous horizontal scaling progress, and increase the capacity of a single chip with fewer layers and more optimized costs.

According to CTOnews.com, one of the breakthrough innovations introduced by the two companies is CMOS direct bonding to array (CBA) technology. Each CMOS wafer and cell array wafer are manufactured at their best and then bonded together to provide higher bit density and faster NAND I / O speeds.

Its NAND I / O speed exceeds 3.2Gb / s, which is 60% higher than that of the previous generation. At the same time, write performance is improved by 20%, and read latency is reduced by 20%, which will bring users a faster and more convenient experience.

This advanced engineering partnership led to the successful launch of the eighth generation of BiCS FLASH, which has the highest bit density in the industry. Samples have been provided to some customers and will be used in a range of data-centric applications in the future, including smartphones, Internet of things devices and data centers.