Shulou(Shulou.com)11/24 Report--

CTOnews.com, October 17 (Xinhua)-- in order to catch up with Pan Forest Group (Lam Research), Tokyo Weili Kotronic / Tokyo Electronics (Tokyo Electron) has successfully developed a device capable of producing 400 layers of 3D NAND flash memory, which is expected to generate billions of dollars in net revenue for the company.

The production of 3D NAND requires specialized equipment, which is currently mainly controlled by the American company Pan Lin Group. CTOnews.com reported in June this year that Tokyo Electronics developed a new etching technology, bringing the application of electroetching to a low temperature range for the first time, and creatively invented a system with extremely high etching rates.

Tokyo Willy Cochon hopes to use this technology to challenge Pan Forest Group, where the new etching method increases productivity by at least 2.5 times compared with existing methods.

Tokyo Weili Cochon said that the harmful impact of this technology on the environment is also very small, and the company expects customers to start producing 400 layers of 3D NAND memory in the next 2-3 years after installation and commissioning. Production capacity in this area is expected to quadruple this year to US $2 billion by 2027.

Tokyo Electronics sold less than $3.9 billion worth of etching equipment in the last fiscal year, accounting for about 1/4 of its total sales. With the help of new technology, the company expects its core sales to at least double.

Tokyo Electronics ranked second with 25 per cent of the market for etching systems in the semiconductor industry, which had sales of $20 billion last year, while Lam Research of the US continued to take the lead, accounting for half of the market.

Tokyo Electronics has increased its R & D spending by 77% over the past five years, and is expected to reach a record $1.34 billion this year (CTOnews.com Note: currently about 9.795 billion yuan).

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Tokyo Electronics Announces the Development of a New etching Technology with 400 layers of stacked 3D NAND Flash memory approaching

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