Great Wall Automobile self-developed and self-produced IGBT power module landed and completed loading at Harvard Owl Dragon MAX.

CTOnews.com news on November 14, Great Wall announced today that the self-developed IGBT power module of Great Wall has successfully landed and has been loaded on the Harvard Owl Dragon MAX.

Great Wall Automobile said that the self-developed IGBT of Great Wall Automobile is directed development, which not only has higher vehicle adaptation and safer hitchhiking, but also is no longer "stuck" by chip shortage, and the terminal supply chain is more stable. at the same time, it only takes 14 months from the establishment of the research and development project to the technical landing of the self-developed chip of Great Wall.

CTOnews.com Note: insulated gate bipolar transistor (English: Insulated Gate Bipolar Transistor,IGBT) is a kind of semiconductor device, which is mainly used for AC motor output control of electric vehicles, railway locomotives and EMU. The traditional BJT has a small on-resistance, but a large driving current, while the MOSFET has a large on-resistance, but it has the advantage of low driving current. IGBT combines the advantages of both: not only the driving current is small, but also the on-resistance is very low.