Shulou(Shulou.com)12/24 Report--

Thanks to CTOnews.com netizen OC_Formula for the clue delivery! CTOnews.com November 30 news, Samsung announced today that LLW (Low Latency Wide IO) DRAM has been specially developed to meet the needs of local AI running on the device side, and its performance is better than the existing LPDDR solution.

LLW DRAM achieves higher efficiency and latency by vertically integrating memory and logic circuits.

Samsung Semiconductor today released an introduction video about LLW DRAM, which is suitable for smartphones, laptops and VR headsets, through its official X platform account.

Samsung first demonstrated LLW DRAM at Tech Day earlier this year, and then demonstrated its LPDDR5X CAMM2 solution again on Memory Tech Day.

In addition, the video also shows a phone with an integrated LLW DRAM, so it seems likely that future Galaxy devices will use the same solution to improve performance.

The phone shown in the ad is indeed very similar to the current generation of Samsung devices, which should be the upcoming Galaxy S24 series. The screenshot of the phone in the video attached to CTOnews.com is as follows:

Samsung is not the first company to implement LLW. Apple's Vision Pro headset uses fan-out wafer-level packaging (FOWLP) to package the R1 chip with the LLW DRAM.

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